?2010 fairchild semiconductor corporation 1 www.fairchildsemi.com FGA20S120M rev. c0 FGA20S120M 1200 v, 20 a shorted-anode igbt march 2013 absolute maximum ratings t c = 25c unless otherwise noted thermal characteristics notes: 1: limited by tjmax symbol description ratings unit v ces collector to emitter voltage 1200 v v ges gate to emitter voltage 25 v i c collector current @ t c = 25 o c 40 a collector current @ t c = 100 o c 20 a i cm (1) pulsed collector current 60 a i f diode continuous forward current @ t c = 25 o c 40 a i f diode continuous forward current @ t c = 100 o c 20 a p d maximum power dissipation @ t c = 25 o c 348 w maximum power dissipation @ t c = 100 o c 174 w t j operating junction temperature -55 to +175 o c t stg storage temperature range -55 to +175 o c t l maximum lead temp. for soldering purposes, 1/8 from case for 5 seconds 300 o c symbol parameter typ. max. unit r jc (igbt) thermal resistance, junction to case -- 0.43 o c / w r jc (diode) thermal resistance, junction to case -- 0.43 o c / w r ja thermal resistance, junction to ambient -- 40 o c / w g c e to-3pn g c e FGA20S120M 1200 v, 20 a shorted-anode igbt features ? high speed switching ? low saturation voltage: v ce(sat) = 1.55 v @ i c = 20 a ? high input impedance ? rohs compliant applications ? induction heating, microwave oven general description using advanced field stop trench and shorted-anode technol- ogy, fairchild ? s shorted-anode trench igbts offer superior con- duction and switching performances for soft switchi ng applications. the device can operate in parallel co nfiguration with exceptional avalanche capability. this device is designed for induction heating and microwave oven.
FGA20S120M 1200 v, 20 a shorted-anode igbt ?2010 fairchild semiconductor corporation 2 www.fairchildsemi.com FGA20S120M rev. c0 package marking and ordering information electrical characteristics of the igbt t c = 25c unless otherwise noted device marking device package reel size tape width quant ity FGA20S120M FGA20S120M to-3pn - - 30 symbol parameter test conditions min. typ. max. unit off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 2ma 1200 - - v i ces collector cut-off current v ce = v ces , v ge = 0v - - 1 ma i ges g-e leakage current v ge = v ges , v ce = 0v - - 250 na on characteristics v ge(th) g-e threshold voltage i c = 20ma, v ce = v ge 4.5 6.0 7.5 v v ce(sat) collector to emitter saturation voltage i c = 20a , v ge = 15v t c = 25 o c - 1.55 1.85 v i c = 20a , v ge = 15v, t c = 125 o c - 1.75 - v i c = 20a , v ge = 15v, t c = 175 o c - 1.85 - v v fm diode forward voltage i f = 20a , t c = 25 o c -- 1.7 2.2 v i f = 20a , t c = 175 o c -- 2.1 - v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz -- 2680 -- pf c oes output capacitance -- 53 -- pf c res reverse transfer capacitance -- 43 -- pf switching characcteristics t d(on) turn-on delay time v cc = 600v, i c = 20a, r g = 10 , v ge = 15v, resistive load, t c = 25 o c - 43 - ns t r rise time - 176 - ns t d(off) turn-off delay time - 310 - ns t f fall time - 320 480 ns e on turn-on switching loss - 0.52 - mj e off turn-off switching loss - 1.43 2.15 mj e ts total switching loss - 1.95 - mj t d(on) turn-on delay time v cc = 600v, i c = 20a, r g = 10 , v ge = 15v, resistive load, t c = 175 o c - 41 - ns t r rise time - 260 - ns t d(off) turn-off delay time - 345 - ns t f fall time - 520 - ns e on turn-on switching loss - 0.78 - mj e off turn-off switching loss - 1.97 - mj e ts total switching loss - 2.75 - mj q g total gate charge v ce = 600v, i c = 20a, v ge = 15v - 208 - nc q ge gate to emitter charge - 18 - nc q gc gate to collector charge - 119 - nc
FGA20S120M 1200 v, 20 a shorted-anode igbt ?2010 fairchild semiconductor corporation 3 www.fairchildsemi.com FGA20S120M rev. c0 typical performance characteristics figure 1. typical output characteristics figure 2. typical output characteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temperature at variant current leve l 0.0 1.5 3.0 4.5 6.0 7.5 9.0 0 20 40 60 80 100 120 140 20v 10v v ge = 7v 8v 17v t c = 25 o c 15v 12v 9v collector current, i c [a] collector-emitter voltage, v ce [v] 0.0 1.5 3.0 4.5 6.0 7.5 9.0 0 20 40 60 80 100 120 140 20v 10v 8v 17v t c = 175 o c 15v 12v 9v v ge = 7v collector current, i c [a] collector-emitter voltage, v ce [v] 0 3 6 9 12 15 0 20 40 60 80 100 common emitter v ce = 20v t c = 25 o c t c = 175 o c collector current, i c [a] gate-emitter voltage,v ge [v] 0 1 2 3 4 5 6 0 20 40 60 80 100 120 140 common emitter v ge = 15v t c = 25 o c t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v] 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 40a 20 a 10a common emitter v ge = 15v collector-emitter voltage, v ce [v] case temperature, t c [ o c] 4 8 12 16 20 0 4 8 12 16 20 i c = 10a 20a 40a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v]
FGA20S120M 1200 v, 20 a shorted-anode igbt ?2010 fairchild semiconductor corporation 4 www.fairchildsemi.com FGA20S120M rev. c0 typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. capacitance characteristics figure 9. gate charge characteristics figure 10. soa characteristics figure 11. turn-on characteristics vs. figure 12. turn-off charact eristics vs. gate resistance gate resistan ce 1 10 2000 4000 6000 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 30 4 8 12 16 20 0 4 8 12 16 20 i c = 10a 20a 40a common emitter t c = 175 o c collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] 0 30 60 90 120 150 180 210 0 3 6 9 12 15 common emitter t c = 25 o c 600v 400v v cc = 200v gate-emitter voltage, v ge [v] gate charge, q g [nc] 1 10 100 1000 0.01 0.1 1 10 100 single nonrepetitive pulse t c = 25 o c curves must be derated linearly with increase in temperature 1ms 10 ms dc 10 ? s 100 ? s collector current, i c [a] collector-emitter voltage, v ce [v] 2000 0 10 20 30 40 50 60 70 100 1000 common emitter v cc = 600v, v ge = 15v i c = 20a t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] gate resistance, r g [ ? ] 3000 0 10 20 30 40 50 60 70 10 common emitter v cc = 600v, v ge = 15v i c = 20a t c = 25 o c t c = 175 o c t d(on) t r switching time [ns] gate resistance, r g [ ? ] 200 100
FGA20S120M 1200 v, 20 a shorted-anode igbt ?2010 fairchild semiconductor corporation 5 www.fairchildsemi.com FGA20S120M rev. c0 typical performance characteristics figure 13. turn-on characteristics vs. figure 14. turn-off characteristics vs . collector current colle ctor current figure 15. switching loss vs. figure 16. switching loss vs. gate resistance coll ector current figure 17. turn-off switching soa characteristics figure 18. diode forward characteristics collector currrent 10 20 30 40 50 10 100 1000 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 175 o c t r t d(on) switching time [ns] collector current, i c [a] 3000 10 20 30 40 50 200 400 600 800 1000 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] collector current, i c [a] 10 20 30 40 50 0.1 1 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 175 o c e on e off switching loss [mj] collector current, i c [a] 5 0 10 20 30 40 50 60 70 0.1 1 common emitter v cc = 600v, v ge = 15v i c = 20a t c = 25 o c t c = 175 o c e on e off switching loss [mj] gate resistance, r g [ ? ] 5 1 10 100 1000 1 10 100 safe operating area v ge = 15v, t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v] 0.0 0.5 1.0 1.5 2.0 t c = 25 o c t c = 175 o c 30 10 1 t j = 25 o c t j = 175 o c forward voltage, v f [v] forward current, i f [a] 0.1
FGA20S120M 1200 v, 20 a shorted-anode igbt ?2010 fairchild semiconductor corporation 6 www.fairchildsemi.com FGA20S120M rev. c0 figure 19. transient therma l impedeance of igbt 1e-5 1e-4 1e-3 0.01 0.1 1 10 1e-3 0.01 0.1 1 duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.01 0.02 0.1 0.05 0.3 single pulse thermal response [zthjc] rectangular pulse duration [sec] 0.5 t 1 p dm t 2
FGA20S120M 1200 v, 20 a shorted-anode igbt ?2010 fairchild semiconductor corporation 7 www.fairchildsemi.com FGA20S120M rev. c0 mechanical dimensions to-3pn dimensions in millimeters
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